Electron and γ irradiation effects in InP assessed by photoluminescence

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3482-3486

  Souza, P L ^a   Ribas, P R ^b   Bellini, J V ^c,e   Mendes, W M ^d  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

^c MILITARY INSTITUTE OF ENGINEERING   (Brazil)

^d CENTRO BRASILEIRO DE PESQUISAS FÍSICAS   (Brazil)

^e STATE UNIVERSITY OF MARINGÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANNEALING; ELECTRON BEAMS; GAMMA RAYS; HALL EFFECT; NITROGEN; PHOTOLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTOR DOPING; SULFUR; TIN;

AMPHOTERIC PROPERTIES; BAND EDGE SPECTRUM; ELECTRON IRRADIATION; FULL WIDTH AT HALF MAXIMUM; LIQUID NITROGEN;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030129214     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361397     Document Type: Article

References (20)

1. A. Yariv, Optical Electronics (CBS College Publishing, New York, 1985); C. Weisbuch and B. Vinter, Quantum Semiconductor Structures-Fundamentals and Applications (Academic, New York, 1991).
2. A. Yariv, Optical Electronics (CBS College Publishing, New York, 1985); C. Weisbuch and B. Vinter, Quantum Semiconductor Structures-Fundamentals and Applications (Academic, New York, 1991).
3. M. Razeghi, The MOCVD Challenge I, A Survey of GaInAsP-InP for Photonic and Electronic Applications (Adam Hilger, Bristol, 1989).
4. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
5. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
6. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
7. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
8. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
9. J.-I. Nishizawa, IEEE J. Quantum Electron. QE-4, 143 (1968); W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, Appl. Phys. Lett. 36, 118 (1980); M. Tajima, Jpn. J. Appl. Phys. 21, L227 (1982); M. J. Tsai, M. M. Tashima, B. L. Twu, and R. L. Moon, Inst. Phys. Conf. Ser. 65, 85 (1983); W. T. Tsang, Appl. Phys. Lett. 46, 1086 (1985); K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
10. J. Bourgoin and M. Lannoo, Point Defects in Semiconductors (Springer, Berlin, 1983).
11. L. A. Christel and J. F. Gibbons. J. Appl. Phys. 52, 397 (1981).
12. E. W. Williams, W. Elder, M. G Astles, M. Webb, J. B. Mullin, B. Straughan, and P. J. Tufton, J. Electrochem. Soc. Solid State Sci. Technol. 120, 1741 (1973).
13. A. Sibille, J. Suski, and M. Gilleron, J. Appl. Phys. 60, 595 (1986).
14. J. A. von Vechten, J. Electrochem. Soc. 122, 423 (1975).
15. H. Xu, Phys. Rev. B 42, 11 295 (1990).
16. N. Duhamel, E. V. K. Rao, M. Gauneau, H. Thibierge, and A. Mircea, J. Cryst. Growth 64, 186 (1983).
17. W. A. Bonner and H. Temkin, J. Cryst. Growth 64, 10 (1983).
18. M. G. Astles, F. G. H. Smith, and E. W. Williams, J. Electrochem. Soc. Solid State Sci. Technol. 120, 1750 (1973).
19. P. R. Ribas, J. V. Bellini, P. L. Souza, and W. M. Mendes, Mater. Sci. Eng. B 28, 465 (1994).
20. M. A. Meyes and K. K. Chawla, in Mechanical and Metallurgy, Principal and Applications (Prentice Hall, Engelwood Cliffs, 1984), Chap. 10.