Low threshold current densities in red VCSELs

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 657-662

  Butendeich, R ^a   Graef, D ^a   Schwarz, J ^a   Ballmann, T ^a   Schweizer, H ^a   Scholz, F ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; INTERFACES (MATERIALS); LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ALUMINUM ARSENIDE; ALUMINUM GALLIUM ARSENIDE; ALUMINUM GALLIUM INDIUM PHOSPHIDE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034497392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00795-8     Document Type: Article

References (7)

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