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Volumn 47-48, Issue , 1996, Pages 65-96

Silicon materials and metrology: Critical concepts for optimal 1C performance in the gigabit era

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; COBALT COMPOUNDS; DEFECTS; INTEGRATED CIRCUITS; REGULATORY COMPLIANCE; SEMICONDUCTOR DEVICE MANUFACTURE; TIMING CIRCUITS;

EID: 17544367755     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (5)

References (100)
  • 1
    • 0003552056 scopus 로고
    • Semiconductor Industry Association, 4300 Stevens Creek Boulevard, Suite 271, San Jose, CA., November
    • National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Stevens Creek Boulevard, Suite 271, San Jose, CA., November. 1994
    • (1994) National Technology Roadmap for Semiconductors
  • 2
    • 84902984978 scopus 로고    scopus 로고
    • Semiconductors, Elemental - Material Properties
    • VCH Publishers (to be published)
    • H.R. Huff, "Semiconductors, Elemental - Material Properties," Encyclopedia of Applied Physics. VCH Publishers (to be published)
    • Encyclopedia of Applied Physics
    • Huff, H.R.1
  • 3
    • 0010319503 scopus 로고
    • Silicon Materials for the Mega-IC Era
    • (edited by G.K. Celler, E. Middlesworth and K. Hoh), The Electrochemical Society, Inc., Pennington, NJ
    • H.R. Huff, "Silicon Materials For The Mega-IC Era," ULSl Science and Technology/1993. (edited by G.K. Celler, E. Middlesworth and K. Hoh), 103-132 (1993), The Electrochemical Society, Inc., Pennington, NJ.
    • (1993) ULSl Science and Technology/1993 , pp. 103-132
    • Huff, H.R.1
  • 4
    • 0004277206 scopus 로고
    • Silicon for Microelectronics
    • (edited by D. Bloor, R.J. Brook, M.C. Flemings and S. Mahajan), Pergamon Press
    • W.M. Bullis and H.R. Huff, "Silicon For Microelectronics," The Encyclopedia of Advanced Materials (edited by D. Bloor, R.J. Brook, M.C. Flemings and S. Mahajan), pp. 2478-2496, Pergamon Press (1994)
    • (1994) The Encyclopedia of Advanced Materials , pp. 2478-2496
    • Bullis, W.M.1    Huff, H.R.2
  • 5
    • 0041390559 scopus 로고
    • Competitive Analysis of 200 mm Epitaxial Silicon Wafers
    • The Electrochemical Society, Inc., Pennington, N.J.
    • H.R. Huff, R.K. Goodall and V. Bhat, "Competitive Analysis of 200 mm Epitaxial Silicon Wafers," ECS Extended Abstracts, 95-1, 269-270, (1995), The Electrochemical Society, Inc., Pennington, N.J.
    • (1995) ECS Extended Abstracts , vol.95 , Issue.1 , pp. 269-270
    • Huff, H.R.1    Goodall, R.K.2    Bhat, V.3
  • 6
    • 0542442208 scopus 로고
    • Distinguishing COPs from Real Particles
    • July
    • E. Morita et al., "Distinguishing COPs From Real Particles," Semiocnductor International, July, 156-162 (1994)
    • (1994) Semiocnductor International , pp. 156-162
    • Morita, E.1
  • 7
    • 0000558930 scopus 로고
    • Evaluation of FPDs and COPs in Silicon Single-Crystals
    • edited by H.R. Huff. W. Bergholz and K. Sumino
    • H. Yamagishi et al., "Evaluation of FPDs and COPs in Silicon Single-Crystals," Semiconductor Silicon/94, (edited by H.R. Huff. W. Bergholz and K. Sumino), 124-135 (1994)
    • (1994) Semiconductor Silicon/94 , pp. 124-135
    • Yamagishi, H.1
  • 8
    • 0025669343 scopus 로고
    • Characterization of Mirror Polished Silicon Wafers Using "Makyoh
    • the Magic Mirror Method, (edited by H. R Huff, K.G. Barraclough and J-i Chikawa), The Electrochemical Society Inc., Pennington, N.J.
    • K. Kugimiya, et al., "Characterization of Mirror Polished Silicon Wafers Using "Makyoh," the Magic Mirror Method, Semiconductor Silicon 11990 (edited by H. R Huff, K.G. Barraclough and J-i Chikawa), 1052-1067 (1990), The Electrochemical Society Inc., Pennington, N.J.
    • (1990) Semiconductor Silicon 11990 , pp. 1052-1067
    • Kugimiya, K.1
  • 9
    • 84902997385 scopus 로고
    • Single 0.100 Micron Spheres are Detected by a Laser Inspection System as Verified by Review in a Scanning Electron Microscope
    • C.T. Larson and S. Arsenault, "Single 0.100 Micron Spheres are Detected by a Laser Inspection System as Verified by Review in a Scanning Electron Microscope," Microcontamination '92 Conference Proceedings, 14-25 (1992)
    • (1992) Microcontamination '92 Conference Proceedings , pp. 14-25
    • Larson, C.T.1    Arsenault, S.2
  • 10
    • 84902982142 scopus 로고
    • Present Understanding of Point Defect Parameters and Diffusion in Silicon: An Overview
    • (edited by G.R. Srinivasan, K. Taniguchi and C.S. Murthy), The Electrochemical Society, Inc., Pennington, N.J.
    • W. Taylor, U. Gosele and T. Y. Tan, "Present Understanding of Point Defect Parameters and Diffusion in Silicon: An Overview," Process Physics and Modeling in Semiconductor Technology, (edited by G.R. Srinivasan, K. Taniguchi and C.S. Murthy), 3-19 (1993), The Electrochemical Society, Inc., Pennington, N.J.
    • (1993) Process Physics and Modeling in Semiconductor Technology , pp. 3-19
    • Taylor, W.1    Gosele, U.2    Tan, T.Y.3
  • 11
    • 3142625338 scopus 로고
    • Diffusion and Solubility of Transition Metals
    • EMIS Datareviews Series, INSPEC, London
    • E.R. Weber, "Diffusion and Solubility of Transition Metals," Properties of Silicon, EMIS Datareviews Series, 4, p. 409-451 INSPEC, London, (1988)
    • (1988) Properties of Silicon , vol.4 , pp. 409-451
    • Weber, E.R.1
  • 12
    • 0005014282 scopus 로고
    • Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float-Zone Technique
    • (edited by H.R. Huff, W. Bergholz and K. Sumino). The Electrochemical Society, Inc., Pennington, N.J.
    • H. Lemke, "Characterization of Transition Metal-Doped Silicon Crystals Prepared by Float-Zone Technique," Semiconductor Silicon/1994, (edited by H.R. Huff, W. Bergholz and K. Sumino). The Electrochemical Society, Inc., Pennington, N.J., 695-710B (1994)
    • (1994) Semiconductor Silicon/1994
    • Lemke, H.1
  • 15
    • 21144472790 scopus 로고
    • Evaluation of Surface Analysis Methods for Characterization of Trace Metal Surface Contaminants Found in Silicon Integrated Circuit Manufacturing
    • A.C. Diebold et al., "Evaluation of Surface Analysis Methods For Characterization of Trace Metal Surface Contaminants Found in Silicon Integrated Circuit Manufacturing", J. Vac. Sci. Technol. A. 10, 2945-2952 (1992)
    • (1992) J. Vac. Sci. Technol. A. , vol.10 , pp. 2945-2952
    • Diebold, A.C.1
  • 21
    • 0000541662 scopus 로고
    • Fundamental Properties of Intrinsic Gettering of Iron in a Silicon Wafer
    • M. Aoki, A. Hara and A. Ohsawa, Fundamental Properties of Intrinsic Gettering of Iron in a Silicon Wafer, J. Appl. Phys., 72, 895-898 (1992)
    • (1992) J. Appl. Phys. , vol.72 , pp. 895-898
    • Aoki, M.1    Hara, A.2    Ohsawa, A.3
  • 23
    • 84975397631 scopus 로고
    • Influence of Impurity- Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors
    • ASTM, STP
    • Y. Ichida, T. Yanada, S. Kawado, "Influence of Impurity- Decorated Stacking Faults on The Transient Response of Metal Oxide Semiconductor Capacitors," Lifetime Factors in Silicon. ASTM, STP 712, 107-118. (1980)
    • (1980) Lifetime Factors in Silicon , vol.712 , pp. 107-118
    • Ichida, Y.1    Yanada, T.2    Kawado, S.3
  • 24
    • 0020822243 scopus 로고
    • Leakage and Breakdown in Thin Oxide Capacitors - Correlation with Decorated king Faults
    • P.S.D. Lin, R.B. Marcus and T.T. Sheng, "Leakage and Breakdown in Thin Oxide Capacitors - Correlation With Decorated king Faults," J. Electrchem. Soc., 130, 1878-1883 (1983)
    • (1983) J. Electrchem. Soc. , vol.130 , pp. 1878-1883
    • Lin, P.S.D.1    Marcus, R.B.2    Sheng, T.T.3
  • 25
    • 0027542119 scopus 로고
    • A Survey of Non-destructive Surface Characterization Methods Used to Insure Reliable Gate Oxide Fabrication for Silicon IC Devices
    • A.C. Diebold and B. Doris, "A Survey of Non-destructive Surface Characterization Methods Used to Insure Reliable Gate Oxide Fabrication for Silicon IC Devices," Surface & Interface Analysis, 20, 127-139 (1993)
    • (1993) Surface & Interface Analysis , vol.20 , pp. 127-139
    • Diebold, A.C.1    Doris, B.2
  • 27
    • 0346554818 scopus 로고
    • Fundamental Metallic Issues for Ultraclean Wafer Surfaces from Aqueous Solutions
    • (edited by M. Heyns) Acco, Leuven. Belgium
    • C.R. Helms et al., "Fundamental Metallic Issues for Ultraclean Wafer Surfaces From Aqueous Solutions," Proceedings Second International Symposium on Ultra-clean Processing of Si Surfaces, (edited by M. Heyns) 205-212, Acco, Leuven. Belgium (1994)
    • (1994) Proceedings Second International Symposium on Ultra-clean Processing of Si Surfaces , pp. 205-212
    • Helms, C.R.1
  • 30
    • 3142620064 scopus 로고
    • Measurement of Silicon Surface Microroughness by AFM
    • Y.E. Strausser et al., "Measurement of Silicon Surface Microroughness by AFM," ECS Extended Abstracts, 94-1, 461-462 (1994)
    • (1994) ECS Extended Abstracts , vol.94 , Issue.1 , pp. 461-462
    • Strausser, Y.E.1
  • 31
    • 0026837569 scopus 로고
    • Dependence of Thin-Oxide Films Quality on Surface Microroughness
    • T. Ohmi et al., "Dependence of Thin-Oxide Films Quality on Surface Microroughness," IEEE Trans. Electron. Devices, 39, 537-545 (1992)
    • (1992) IEEE Trans. Electron. Devices , vol.39 , pp. 537-545
    • Ohmi, T.1
  • 32
    • 3342924439 scopus 로고    scopus 로고
    • Finite-Temperature Phase Diagram of Vicinal Si(100) Surfaces
    • O.L.Alerhand et al., "Finite-Temperature Phase Diagram of Vicinal Si(100) Surfaces," Phys. Rev. Letts., 64, 2406-2409
    • Phys. Rev. Letts. , vol.64 , pp. 2406-2409
    • Alerhand, O.L.1
  • 33
    • 0001479037 scopus 로고    scopus 로고
    • Nature of the Step-Height Transition on Vicinal Si (001) Surfaces
    • E. Pehlke and J. Tersoff, "Nature of The Step-Height Transition on Vicinal Si (001) Surfaces," Phys. Rev. Letts., 67, 465-465
    • Phys. Rev. Letts. , vol.67 , pp. 465-465
    • Pehlke, E.1    Tersoff, J.2
  • 34
    • 4243821474 scopus 로고
    • Phase Diagram of Vicinal Si(001) Surfaces
    • E-Pehlke and J. Tersoff, "Phase Diagram of Vicinal Si(001) Surfaces," Phys. Rev. Letts., 67, 1290-1293 (1991)
    • (1991) Phys. Rev. Letts. , vol.67 , pp. 1290-1293
    • Pehlke, E.1    Tersoff, J.2
  • 36
    • 0001862016 scopus 로고
    • Microroughness of Silicon Wafers
    • edited by H.R. Huff, W.Bergholz and K. The Electrochemical Society, Inc.
    • W.M. Bullis, "Microroughness of Silicon Wafers," Semiconductor Silicon/94," (edited by H.R. Huff, W.Bergholz and K. 1156-1169 (1994), The Electrochemical Society, Inc.
    • (1994) Semiconductor Silicon/94 , pp. 1156-1169
    • Bullis, W.M.1
  • 37
    • 3142629020 scopus 로고
    • edited by H.R. Huff, W.Bergholz and K. Sumino, Electrochemical Society. Inc.
    • S. Verhaverbeke et al., in "Semiconductor Silicon/94," (edited by H.R. Huff, W.Bergholz and K. Sumino, 1170-1181 (1994). Electrochemical Society. Inc.
    • (1994) Semiconductor Silicon/94 , pp. 1170-1181
    • Verhaverbeke, S.1
  • 39
    • 58649091800 scopus 로고
    • Understanding Focus Effects in Submicron Optical Lithography, Part 3: Methods for Depth-of-Focus Improvements
    • (edited by J.D. Cuthbert), SPIE
    • C.A. Mack, "Understanding Focus Effects in Submicron Optical Lithography, Part 3: Methods for Depth-of-Focus Improvements," Optical/Laser Microlithography V. (edited by J.D. Cuthbert), SPIE, 1674, 272-284 (1992)
    • (1992) Optical/Laser Microlithography V , vol.1674 , pp. 272-284
    • Mack, C.A.1
  • 40
    • 0025901318 scopus 로고
    • + Epitaxial Silicon Wafer Flatness for Deep Sub-Micron Applications
    • (edited by W.H. Arnold), SPIE
    • + Epitaxial Silicon Wafer Flatness for Deep Sub-Micron Applications," Integrated Circuit Metrology. Inspection and Process Control V, (edited by W.H. Arnold), SPIE, 1464, 278-293 (1991)
    • (1991) Integrated Circuit Metrology. Inspection and Process Control V , vol.1464 , pp. 278-293
    • Huff, H.R.1    Weed, H.2
  • 41
    • 0026404716 scopus 로고
    • The Optimum Numerical Aperature for Optical Projection Microlithography
    • edited by V. Pol, SPIE
    • B. J. Lin, "The Optimum Numerical Aperature For Optical Projection Microlithography," Optical/Laser Microlithography IV, (edited by V. Pol, SPIE, 1463, 42-53 (1991)
    • (1991) Optical/Laser Microlithography IV , vol.1463 , pp. 42-53
    • Lin, B.J.1
  • 42
    • 84902993077 scopus 로고    scopus 로고
    • 1990 SEMI International Standards. SEMI MI-90. Figre A1.1 Flatness Decision Tree
    • 1990 SEMI International Standards. SEMI MI-90. Specifications for Polished Monocrystalline Silicon Wafers, Figre A1.1 Flatness Decision Tree
    • Specifications for Polished Monocrystalline Silicon Wafers
  • 43
    • 0027187185 scopus 로고
    • + Epitaxial Silicon Wafer Flatness Parameters for Deep Submicron Applications
    • + Epitaxial Silicon Wafer Flatness Parameters for Deep Submicron Applications," J. Electrochem. Sac., 140, 229-241 (1993)
    • (1993) J. Electrochem. Sac. , vol.140 , pp. 229-241
    • Huff, H.R.1    Popham, G.H.2    Potter, R.W.3
  • 44
    • 84902950679 scopus 로고    scopus 로고
    • to be submitted
    • R.K. Goodall, (to be submitted)
    • Goodall, R.K.1
  • 45
    • 0026449108 scopus 로고
    • Correlation of 150 mm Silicon Wafer Site Flatness with Stepper Performance for Deep Sub-Micron Applications
    • (edited by M.T. Postek), SPIE 1673
    • H.R. Huff et al., "Correlation of 150 mm Silicon Wafer Site Flatness With Stepper Performance For Deep Sub-Micron Applications," IC Metrology, Inspection and Process Control VI. (edited by M.T. Postek), SPIE 1673, 357-368 (1992)
    • (1992) IC Metrology, Inspection and Process Control VI , pp. 357-368
    • Huff, H.R.1
  • 46
    • 84902962024 scopus 로고
    • A Fourier Analysis of Silicon Wafer Topography
    • L. Denes and H.R. Huff, "A Fourier Analysis of Silicon Wafer Topography," J. Electrochem. Soc., 139, 558C (1992)
    • (1992) J. Electrochem. Soc. , vol.139
    • Denes, L.1    Huff, H.R.2
  • 47
    • 0343646349 scopus 로고
    • The Ductile Mode Grinding Technology Applied to Silicon Wafering Process
    • (edited by H.R. Huff, W. Bergholz and K. Sumino), The Electrochemical Society, Inc.
    • T. Abe et al., "The Ductile Mode Grinding Technology Applied to Silicon Wafering Process," Semiconductor Silicon/94, (edited by H.R. Huff, W. Bergholz and K. Sumino), 207-217 (1994), The Electrochemical Society, Inc.
    • (1994) Semiconductor Silicon/94 , pp. 207-217
    • Abe, T.1
  • 48
    • 0022766403 scopus 로고
    • Film-Induced Stress Model
    • E. W. Heam et al., "Film-Induced Stress Model," J. Electrochem. Soc., 133, 1749-1751 (1986)
    • (1986) J. Electrochem. Soc. , vol.133 , pp. 1749-1751
    • Heam, E.W.1
  • 49
    • 0009446474 scopus 로고
    • Silicon Epitaxial Layers: Defects
    • (edited by D. Bloor, R.J. Brook, M.C. Flemings and S. Mahajan), Pergamon Press
    • R. Wise et al., "Silicon Epitaxial Layers: Defects," The Encyclopedia of Advanced Materials, (edited by D. Bloor, R.J. Brook, M.C. Flemings and S. Mahajan), 2469-2478 (1994) Pergamon Press
    • (1994) The Encyclopedia of Advanced Materials , pp. 2469-2478
    • Wise, R.1
  • 50
    • 0010296531 scopus 로고
    • The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflection Spectroscopy
    • edited by D.K. Schroder, J.L.Benton and P. Rai-Choudhury
    • B.W. Fowler et al., "The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflection Spectroscopy," Diagnostic Techniques for Semiconductor Materials and Devices/94," (edited by D.K. Schroder, J.L.Benton and P. Rai-Choudhury), 254-265 (1994)
    • (1994) Diagnostic Techniques for Semiconductor Materials and Devices/94 , pp. 254-265
    • Fowler, B.W.1
  • 52
    • 84902989538 scopus 로고
    • Measurement of Silicon Particles by Laser Surface Scanning and Angle-Resolved Light Scattering
    • H.R. Huff et al., "Measurement of Silicon Particles by Laser Surface Scanning and Angle-Resolved Light Scattering," Microcontamination '94 Conference Proceedings, 121-131 (1994)
    • (1994) Microcontamination '94 Conference Proceedings , pp. 121-131
    • Huff, H.R.1
  • 53
    • 84902977364 scopus 로고    scopus 로고
    • Measurement of Silicon Particles by Laser Surface Scanning and Angle-Resolved Light Scattering
    • edited by E.M. Middlesworth and H.Z. Massoud, (to be published)
    • H.R. Huff et al., "Measurement of Silicon Particles by Laser Surface Scanning and Angle-Resolved Light Scattering," Fifth International Symposium on ULSI Science and Technology (edited by E.M. Middlesworth and H.Z. Massoud), (to be published)
    • Fifth International Symposium on ULSI Science and Technology
    • Huff, H.R.1
  • 55
    • 84902952375 scopus 로고    scopus 로고
    • private communication
    • D. Hirleman, private communication
    • Hirleman, D.1
  • 56
    • 84902954768 scopus 로고    scopus 로고
    • Scatterometry: Principles, Applications, Limitations and Future Prospects
    • edited by W.M. Bullis, A.C. Diebold and D. Seiller, (to be published)
    • J.C. Stover, "Scatterometry: Principles, Applications, Limitations and Future Prospects," International Workshop on Semiconductor Characterization: Present Status and Future Needs, (edited by W.M. Bullis, A.C. Diebold and D. Seiller), (to be published)
    • International Workshop on Semiconductor Characterization: Present Status and Future Needs
    • Stover, J.C.1
  • 57
    • 84902957346 scopus 로고    scopus 로고
    • Applications of Carrier Lifetime and Diffusion Length Measurements
    • edited by E.M. Middlesworth and H.Z. Massoud, (to be published)
    • W.M. Bullis and H.R. Huff, "Applications of Carrier Lifetime and Diffusion Length Measurements," Fifth International Symposium on ULSI Science and Technology (edited by E.M. Middlesworth and H.Z. Massoud), (to be published)
    • Fifth International Symposium on ULSI Science and Technology
    • Bullis, W.M.1    Huff, H.R.2
  • 58
    • 0022240195 scopus 로고
    • Silicon Defects: Structures, Chemistry and Electrical Properties
    • edited by N.G. Einspruch and H.R. Huff
    • L.C. Kimerling and J.R. Patel, "Silicon Defects: Structures, Chemistry and Electrical Properties," VLSI Electronics: Microstructure Science, (edited by N.G. Einspruch and H.R. Huff). 12, 223-267 (1985)
    • (1985) VLSI Electronics: Microstructure Science , vol.12 , pp. 223-267
    • Kimerling, L.C.1    Patel, J.R.2
  • 59
    • 21544455719 scopus 로고
    • Iron Detectionin the Part Per Quadrillion Range in Silicon Using Surface Photovolttge and Photodissociation of Iron-Boron Pairs
    • J. Lagowski et al., "Iron Detectionin the Part Per Quadrillion Range in Silicon Using Surface Photovolttge and Photodissociation of Iron-Boron Pairs," Appl. Phys. Lett., 63, 3043-3045 (1993)
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3043-3045
    • Lagowski, J.1
  • 60
    • 0001363416 scopus 로고
    • A Fast, Preparation-Free Method to Detect Iron in Silicon
    • G. Zoth and W. Bergholz, A Fast, Preparation-Free Method to Detect Iron in Silicon, J. Appl. Phys., 67, 6764-6771 (1980)
    • (1980) J. Appl. Phys. , vol.67 , pp. 6764-6771
    • Zoth, G.1    Bergholz, W.2
  • 61
    • 3142623591 scopus 로고
    • Monitoring of Heavy Metal Contamination during Chemical Cleaning with Surface Photovoltage
    • (edited by J. Ruzyllo and R.E. Novak), The Electrochemical Society, Inc., Pennington, N.J.
    • L. Jastrzebski et al., Monitoring of Heavy Metal Contamination During Chemical Cleaning with Surface Photovoltage in Proceedings of 2nd Symposium on Cleaning Technology in Semiconductor Device Manufacturing," (edited by J. Ruzyllo and R.E. Novak), 294-313 (1992), The Electrochemical Society, Inc., Pennington, N.J.
    • (1992) Proceedings of 2nd Symposium on Cleaning Technology in Semiconductor Device Manufacturing , pp. 294-313
    • Jastrzebski, L.1
  • 63
    • 0020169645 scopus 로고
    • The Concept of Generation and Recombination Lifetimes in Semiconductors
    • D.K. Schroder, "The Concept of Generation and Recombination Lifetimes in Semiconductors," IEEE Trans. Electron Devices, ED-29, 1336-1338 (1982)
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1336-1338
    • Schroder, D.K.1
  • 64
    • 84902957878 scopus 로고    scopus 로고
    • Si Surface Preparation and Wafer Cleaning: The Critical Role, Status and Future Needs in Characterization
    • edited by W.M. Bullis, D. Seiller and A.C. Diebold, (to be published)
    • R. Helms, "Si Surface Preparation and Wafer Cleaning: The Critical Role, Status and Future Needs in Characterization," International Workshop on Semiconductor Characterization: Present Status and Future Needs, (edited by W.M. Bullis, D. Seiller and A.C. Diebold), (to be published)
    • International Workshop on Semiconductor Characterization: Present Status and Future Needs
    • Helms, R.1
  • 65
    • 0025586937 scopus 로고
    • Data Point Selection for Site Qualification of Wafers for ULSI Lithography
    • edited by W.H. Arnold, SPIE
    • R.K. Goodall and N. Poduje, "Data Point Selection For Site Qualification of Wafers For ULSI Lithography," IC Metrology, Inspection and Process Control IV, (edited by W.H. Arnold), SPIE, 1261, 240-252 (1990)
    • (1990) IC Metrology, Inspection and Process Control IV , vol.1261 , pp. 240-252
    • Goodall, R.K.1    Poduje, N.2
  • 67
    • 0026366652 scopus 로고
    • 64M-bit DRAM Production with i-Line Stepper
    • (edited by V. Pol), SPIE
    • Shirai et al., "64M-bit DRAM Production With i-Line Stepper," Optical/Laser Microlithography IV, (edited by V. Pol), SPIE, 1463, 256-274 (1991)
    • (1991) Optical/Laser Microlithography IV , vol.1463 , pp. 256-274
    • Shirai1
  • 68
    • 0026001796 scopus 로고
    • New Approach to Resolution Limit and Advanced Image Formation Techniques in Optical Lithography
    • H. Fukuda et al., "New Approach to Resolution Limit and Advanced Image Formation Techniques in Optical Lithography," IEE Trans. Electron Devices, ED-38, 67-75 (1991)
    • (1991) IEE Trans. Electron Devices , vol.ED-38 , pp. 67-75
    • Fukuda, H.1
  • 69
    • 84902960912 scopus 로고
    • Phase Shifting Masks for Application to 0.25 μn Lithography Using Both DUV and I-Line Exposure
    • Chiba University, Tokyo, Japan, June
    • P.K. Vasudev, "Phase Shifting Masks for Application to 0.25 μn Lithography Using Both DUV and I-Line Exposure," Presented at the Photopolymer Science and Technology Conference, Chiba University, Tokyo, Japan, June 1993
    • (1993) Photopolymer Science and Technology Conference
    • Vasudev, P.K.1
  • 70
    • 0025674879 scopus 로고
    • Silicon Substrate Properties and ULSI Yield
    • edited by H.R. Huff, K.G. clough and J. Chikawa
    • D. Bruner et al., "Silicon Substrate Properties and ULSI Yield," Semiconductor Silicon/90, (edited by H.R. Huff, K.G. clough and J. Chikawa), 912-923B (1990)
    • (1990) Semiconductor Silicon/90
    • Bruner, D.1
  • 72
    • 5244378887 scopus 로고
    • Intrinsic Gettering by Oxide Precipitate Induced Dislocations in Czochralski Si
    • T.Y. Tan, E.E. Gardner and W.K. Tice, "Intrinsic Gettering by Oxide Precipitate Induced Dislocations in Czochralski Si," Appl. Phys. Letts., 30, 175-176 (1977)
    • (1977) Appl. Phys. Letts. , vol.30 , pp. 175-176
    • Tan, T.Y.1    Gardner, E.E.2    Tice, W.K.3
  • 73
  • 75
    • 0025625647 scopus 로고
    • Effects of Impurities on Microelectronic Devices
    • edited by H.R. Huff, K.G. cloughn and J. Chikawa
    • A. Ohsawa et al., "Effects of Impurities on Microelectronic Devices," Semiconductor Silicon/90, (edited by H.R. Huff, K.G. cloughn and J. Chikawa), 601-613 (1990)
    • (1990) Semiconductor Silicon/90 , pp. 601-613
    • Ohsawa, A.1
  • 76
    • 0006178014 scopus 로고
    • Gettering Phenomena in Silicon
    • edited by H.R. Huff, W. Bergholz and
    • D. Gilles and H. Ewe. "Gettering Phenomena in Silicon," Semiconductor Silicon/1994, (edited by H.R. Huff, W. Bergholz and ), 772-783 (1994)
    • (1994) Semiconductor Silicon/1994 , pp. 772-783
    • Gilles, D.1    Ewe, H.2
  • 77
    • 36449003040 scopus 로고
    • + Epitaxial Silicon Wafers with Heavily Boron-Doped
    • + Epitaxial Silicon Wafers with Heavily Boron-Doped," Appl. Phys. Letts., 66, 2709-2711 (1995)
    • (1995) Appl. Phys. Letts. , vol.66 , pp. 2709-2711
    • Aoki, M.1    Itakura, T.2    Sasaki, N.3
  • 78
    • 84902971709 scopus 로고    scopus 로고
    • edited by E.M. Middlesworth and H. Z. Massoud, (to be published)
    • J.L. Beoton, et al., "Enhanced Segregation Gettering of Iron in Silicon by Boron Ion-Implantation," Fifth International Symposium on ULSI Science and Technology (edited by E.M. Middlesworth and H. Z. Massoud), (to be published)
    • Fifth International Symoosium on ULSI Science and Technology
    • Beoton, J.L.1
  • 79
    • 0025590904 scopus 로고
    • Thermal History Analysis of Crystal by the Transient Global Heat Transfer Model for CZ Crystal Growth
    • edited by H.R. Huff, K.G.'Barraclough and J. Chikawa
    • S. Miyahara et al., "Thermal History Analysis of Crystal by the Transient Global Heat Transfer Model for CZ Crystal Growth," Semiconductor Silicon/90, (edited by H.R. Huff, K.G.'Barraclough and J. Chikawa) 94-104 (1990)
    • (1990) Semiconductor Silicon/90 , pp. 94-104
    • Miyahara, S.1
  • 82
    • 0028531673 scopus 로고
    • Double Layered CZ (DLCZ) Silicon Crystal Growth
    • (edited by H.R.. Huff, W. Bergholz and K. Sumino), The Electrochemical Society
    • S. Kobayashi et al., "Double Layered CZ (DLCZ) Silicon Crystal Growth," Semiconductor Silicon/94, (edited by H.R.. Huff, W. Bergholz and K. Sumino), 58-69 (1994), The Electrochemical Society
    • (1994) Semiconductor Silicon/94 , pp. 58-69
    • Kobayashi, S.1
  • 83
    • 0028760324 scopus 로고
    • Modelling Point Defect Dynamics in the Crystal Growth of Silicon
    • R.A. Brown, D. Maraudas and T. Sinno, "Modelling Point Defect Dynamics in The Crystal Growth of Silicon," J. Cryst. Growth, 137, 12-25 (1994)
    • (1994) J. Cryst. Growth , vol.137 , pp. 12-25
    • Brown, R.A.1    Maraudas, D.2    Sinno, T.3
  • 84
    • 3142589562 scopus 로고
    • Point Defect Dynamics in Silicon and the Connection between Microdefect Formation and Operating Conditions in the Bulk Growth of Silicon
    • edited by H.R. Huff, W. Bergholz and K. Sumino
    • T. Sinno and R. A. Brown, "Point Defect Dynamics in Silicon and the Connection Between Microdefect Formation and Operating Conditions in the Bulk Growth of Silicon," Semiconductor Silicon/1994 (edited by H.R. Huff, W. Bergholz and K. Sumino), 625-634B (1994)
    • (1994) Semiconductor Silicon/1994
    • Sinno, T.1    Brown, R.A.2
  • 86
    • 0348029557 scopus 로고
    • Silicon Material Properties for VLSI Circuitry
    • (edited by N.G. Einspruch). Academic Press, NY
    • J.E. Lawrence and H.R. Huff, "Silicon Material Properties for VLSI Circuitry," VLSI Electronics: Microstructure Science, (edited by N.G. Einspruch). 5, 51-102 (1982), Academic Press, NY
    • (1982) VLSI Electronics: Microstructure Science , vol.5 , pp. 51-102
    • Lawrence, J.E.1    Huff, H.R.2
  • 88
    • 0020781581 scopus 로고
    • Some Observations on Oxygen Precipitation/Gettering in Device Processed Czochralski Silicon
    • H.R. Huff et al., "Some Observations on Oxygen Precipitation/Gettering in Device Processed Czochralski Silicon," J. Electrochem., Soc., 130, 1551-1555 (1983)
    • (1983) J. Electrochem., Soc. , vol.130 , pp. 1551-1555
    • Huff, H.R.1
  • 89
    • 0022894282 scopus 로고
    • Oxygen-Related Defects in CZ-Silicon after Annealing at 635°C
    • edited by H.R. Huff, T. Abe and B. Kolbesen
    • W. Bergholz, J.L. Hutchison and G.R. Booker, "Oxygen-Related Defects in CZ-Silicon After Annealing at 635°C," Semiconductor Silicon/86, (edited by H.R. Huff, T. Abe and B. Kolbesen), 874-888 (1986)
    • (1986) Semiconductor Silicon/86 , pp. 874-888
    • Bergholz, W.1    Hutchison, J.L.2    Booker, G.R.3
  • 91
    • 0022801661 scopus 로고
    • The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage and Flatness
    • C.O. Lee and P. Tobin, "The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage and Flatness," J. Electrochem. Soc., 133, 2147-2152 (1986)
    • (1986) J. Electrochem. Soc. , vol.133 , pp. 2147-2152
    • Lee, C.O.1    Tobin, P.2
  • 92
    • 0009341018 scopus 로고
    • Simulation of Temperature Distributions during Fast Thermal Processing
    • edited by H.R. Huff, W. Bergholz and K. Sumino
    • M. Schrems et al., "Simulation of Temperature Distributions During Fast Thermal Processing," Semiconductor Silicon/94, (edited by H.R. Huff, W. Bergholz and K. Sumino), 1050-1063 (1994)
    • (1994) Semiconductor Silicon/94 , pp. 1050-1063
    • Schrems, M.1
  • 93
    • 84902952967 scopus 로고    scopus 로고
    • sponsored by the Japan Society for the Promotion of Science, Dec. 21, 1994. Tokyo, Japan (In Japanese, translated by SEMATECH)
    • The 145th Committee for Crystal Processing and Evaluation Technology, 68th Seminar Materials, sponsored by the Japan Society for the Promotion of Science, Dec. 21, 1994. Tokyo, Japan (In Japanese, translated by SEMATECH)
    • 68th Seminar Materials
  • 94
    • 0002591257 scopus 로고
    • High Energy Ion Implantation for ULSI: Well Engineering and Gettering
    • K. Tsukamoto et al., "High Energy Ion Implantation for ULSI: Well Engineering and Gettering," Solid State Tech., 35 (6), 49-55 (1992)
    • (1992) Solid State Tech. , vol.35 , Issue.6 , pp. 49-55
    • Tsukamoto, K.1
  • 95
    • 0028552482 scopus 로고
    • Hydrogen Denudation for Thin Oxide Quality, Device Performance and Potential Epitaxial Elimination
    • M. Gardner et al., "Hydrogen Denudation for Thin Oxide Quality, Device Performance and Potential Epitaxial Elimination," 1994 VLSI Technology Symposium, 111-112 (1994)
    • (1994) 1994 VLSI Technology Symposium , pp. 111-112
    • Gardner, M.1
  • 96
    • 0345147529 scopus 로고
    • Low Temperature Impurity Gettering for Giga-Scale Integrated Circuit Technology
    • edited by H.R. Huff, W. Bergholz and K. Sumino
    • G.A. Rozgonyi et al., "Low Temperature Impurity Gettering For Giga-Scale Integrated Circuit Technology," Semiconductor Silicon/94. (edited by H.R. Huff, W. Bergholz and K. Sumino), 868-883 (1994)
    • (1994) Semiconductor Silicon/94 , pp. 868-883
    • Rozgonyi, G.A.1
  • 97
    • 36449001205 scopus 로고
    • Iron Diffusivity in Silicon: Impact of Charge State
    • S.V. Koveshnikov and G.A. Rozgonyi, "Iron Diffusivity in Silicon: Impact of Charge State," Appl. Phys. Lett., 66, 860-862 (1995)
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 860-862
    • Koveshnikov, S.V.1    Rozgonyi, G.A.2
  • 100
    • 84902963845 scopus 로고
    • 2001 Semiconductor Manufacturing
    • "2001 Semiconductor Manufacturing," Break Through Journal Special Issue #71 (1992)
    • (1992) Break Through Journal Special Issue , vol.71


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.