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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6587-6593

Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

(6) Noma, Takashi a,b Seol, Kwang Soo c Fujimaki, Makoto d Kato, Hiromitsu b Watanabe, Takashi b Ohki, Yoshimichi b

a SANYO Semiconductor Co Ltd (Japan)

b WASEDA UNIVERSITY (Japan)

c RIKEN (Japan)

d ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

Luminescence; PECVD; Photoluminescence; Silicon nitride; Silicon oxide; Silicon oxynitride

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; OXYGEN; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0034474673 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.6587 Document Type: Article

Times cited : (12)

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