Impedance of barrier-type oxide layer on aluminum

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6690-6695

  Oh, Han Jun ^a   Kim, Jung Gu ^b   Jeong, Yong Soo ^c   Chi, Choong Soo ^d  

^a Hanseo University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Korea Institute of Machine and Materials   (South Korea)

^d Kookmin University   (South Korea)

Author keywords

Barrier type aluminum oxide; Capacitor; Electrochemical impedance spectroscopy (EIS); Equivalent circuit; Rutherford backscattering spectroscopy (RBS); Transmission electron microscopy (TEM); Young impedance

Indexed keywords

ALUMINUM; ELASTIC MODULI; ELECTRIC CONDUCTANCE; FREQUENCY RESPONSE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

BARRIER TYPE ALUMINUM OXIDE; OXIDE-ELECTROLYTE INTERFACE;

OXIDES;

EID: 0034474560     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6690     Document Type: Article

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