A new ferroelectric material for use in FRAM: Lanthanum-substituted bismuth titanate

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 237-242

  Noh, T W ^a   Park, B H ^a   Kang, B S ^a   Bu, S D ^a   Lee, J ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; FATIGUE OF MATERIALS; PEROVSKITE; RANDOM ACCESS STORAGE; SUBSTITUTION REACTIONS; THIN FILMS; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BISMUTH TITANATE; FATIGUE FREE PROPERTIES; FERROELECTRIC RANDOM ACCESS MEMORY; PEROVSKITE STRUCTURE;

FERROELECTRIC MATERIALS;

EID: 0034473540     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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