Modeling and characterization of Si/SiO2 interface roughness

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 43-44

  Lin, Heng Chih ^a   Kan, Edwin C ^a   Yamanaka, Toshiyaki ^a   Helms, C R ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRON TUNNELING; HOT CARRIERS; INTERFACES (MATERIALS); MOS DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SILICA; SURFACE ROUGHNESS;

FOWLER NORDHEIM TUNNELING;

ULSI CIRCUITS;

EID: 0030673429     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)