Simple new method for the investigation of process latitude in E-beam lithography with positive resists

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 333-336

  Kudryashov, V A ^a   Prewett, P D ^b   Michette, A G ^c  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^c KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUIT TESTING; PHOTORESISTS; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES;

POSITIVE RESISTS; PROCESS LATITUDE; RESIST REFLOW TECHNIQUE;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034205304     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00327-0     Document Type: Article

References (3)

1. 1. S.E.Huq, R.A.Moody, P.Herman and P.D.Prewett Microelectronic Engineering 23 (1994) 291-294
2. 2. Z.Cui, R.A.Moody, I.M.Loader, J.G.Watson and P.D.Prewett Microelectronic Eng. 35 (1997) 145-148
3. 3. V.Kudryashov, P.D.Prewett, A.G.Mishette Microelectronic Eng. 46 (1999) 209-212.