|
|
Volumn 618, Issue , 2000, Pages 185-191
|
|
A quantitative model of surface segregation in III-V ternary compounds
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
HETEROJUNCTIONS;
LATTICE CONSTANTS;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SUBSTRATES;
TERNARY SYSTEMS;
TERNARY COMPOUNDS;
SEMICONDUCTOR GROWTH;
|
|
EID: 0034450108
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: 10.1557/PROC-618-185 Document Type: Article |
|
Times cited : (5)
|
|
References (15)
|
