A novel 'Cool' Insulated Base Transistor

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 313-316

  De Souza, M M ^a   Spulber, O ^a   Narayanan, E M S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ELECTRIC CONVERTERS; ELECTRIC CURRENTS; MOS DEVICES; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

COOL INSULATED BASE TRANSISTOR; CURRENT AMPLIFICATION; FLOATING OHMIC CONTACT; SUPER-JUNCTION CONCEPT;

BIPOLAR TRANSISTORS;

EID: 0034449951     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A novel CMOS-compatible high-voltage transistor structure
2. A CMOS-compatible high-voltage IC process
3. Analysis of CMOS-compatible lateral insulated base transistors
4. Analysis of the vertical insulated-base transistor
5. Simulated superior performance of semiconductor super-junction devices
6. Drastic reduction of on-resistance with CoolMOS
7. A new generation of high-voltage MOSFETs breaks the limit line of silicon