IGBT module setup with integrated micro-heat sinks

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 209-212

  Steiner, T ^a   Sittig, R ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CERAMIC MATERIALS; COMPUTER SIMULATION; HEAT RESISTANCE; HEAT SINKS; HEAT TRANSFER COEFFICIENTS; SEMICONDUCTOR DIODES; THERMAL CONDUCTIVITY OF SOLIDS; THERMODYNAMIC PROPERTIES;

DBC COOLER; HIGH HEAT TRANSFER COEFFICIENT; INTEGRATED MICRO-HEAT SINK; OPTIMIZED FIN STRUCTURE;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034449071     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Material requirements for high voltage, high power IGBT devices
2. 2.5 kV-100 a flat-packaged IGBT (micro-stack IGBT)
3. Reduction of thermomechanical stress by applying a low temperature joining technique