Advantages of thick CVD gate oxide for trench MOS gate structures

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 83-86

  Nakamura, K ^a   Kusunoki, S ^a   Nakamura, H ^a   Harada, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; OXIDES; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; THICKNESS MEASUREMENT;

DIELECTRIC BREAKDOWN; LOCAL OXIDATION OF SILICON; TRENCH GATE OXIDE;

MOS DEVICES;

EID: 0034449047     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A 4500V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
2. 600V trench IGBT in comparison with planar IGBT -an evolution of the limit of IGBT performance
3. 1200V-trench-IGBT study with square short circuit SOA
4. Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation
5. Evaluation of thick silicon dioxides grown on trench MOS gate structures
6. 2 dielectric layer for memory capacitor
7. 2 stacked film
8. High reliable UMOSFET with oxide-nitride complex gate structure
9. Poole-Frenkel effect and Schottky effect in metal-insulator-metal systems
10. Transconductance in nitride-gate or oxynitride-gate transitor