Resurfed lateral bipolar transistors for high-voltage, High-frequency applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 185-187

  Cao, G J ^a   De Souza, M M ^a   Narayanan, E M S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Kirk effect; Lateral bipolar transistor; Resurf effect; SOI

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

BREAKDOWN VOLTAGE; GRADUALLY DOPED COLLECTOR; KIRK EFFECT; RESURF LATERAL BIPOLAR TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 0034449022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A self-aligned lateral bipolar transistor realized on SIMOX-material
2. A high-performance lateral bipolar transistor fabricated on SIMOX
3. max lateral BJT on SOI using self-aligned external base formation technology
4. A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation
5. Collector design tradeoffs for low voltage applications of advanced bipolar transistors
6. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI resurf LDMOS transistors
7. A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region