A novel diffusion barrier using oxygen stopping layer for high density FRAM

Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 351-358

  Song, Y J ^a   Kim, H H ^a   Lee, S Y ^a   Jung, D J ^a   Koo, B J ^a   Chang, N W ^a   Kim, C J ^a   Kim, K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Barrier; FRAM; PZT

Indexed keywords

ANNEALING; COERCIVE FORCE; DIFFUSION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRIC DEVICES; IRIDIUM; POLYSILICON; RANDOM ACCESS STORAGE;

AUGER DEPTH PROFILE; DIFFUSION BARRIER; FERROELECTRIC RANDOM ACCESS MEMORY; OXYGEN STOPPING LAYER;

FERROELECTRIC MATERIALS;

EID: 0034448692     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580008215668     Document Type: Conference Paper

References (5)