Hydrogenated amorphous silicon and silicon nitride deposited at less than 100° C by ECR-PECVD for thin film transistors

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Flewitt, A J ^a   Dyson, A P ^a   Robertson, J ^a   Milne, W I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; STOICHIOMETRY;

GAS PHASE REACTIONS;

THIN FILM TRANSISTORS;

EID: 0034431270     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a28.2     Document Type: Conference Paper

References (14)