Lifetime and spin relaxation time measurements of micro-fabricated GaAs tips

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 7093-7096

  Shinohara, Ryoichi ^a   Yamaguchi, Koichi ^a   Hirota, Hidenobu ^a   Suzuki, Yoshishige ^b,c   Manago, Takashi ^d   Akinaga, Hiroyuki ^b   Kuroda, Takashi ^e   Minami, Fujio ^e  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAs; Lifetime; SP STM; Spin polarization; Spin relaxation time

Indexed keywords

ELECTRON TRANSITIONS; PHOTOLUMINESCENCE; POLARIZATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SUBSTRATES;

MICRO-FABRICATED MICROTIPS; SPIN RELAXATION TIME; TIME-RESOLVED POLARIZED PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034430662     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.7093     Document Type: Article

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