Thickness and interface layer effects on the amorphous silicon film property studied by various photoluminescence excitation wavelengths

Materials Research Society Symposium-Proceedings

Volumn 609, Issue , 2000, Pages A591-A597

  Yue, Guozhen ^a   Han, Daxing ^a   Yang, Jeffrey ^b   Guha, Subhendu ^b  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

^b United Solar Systems Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SUBSTRATES; THICKNESS MEASUREMENT; THIN FILMS;

PHOTOLUMINESCENCE EXCITATION WAVELENGTHS;

AMORPHOUS SILICON;

EID: 0034429707     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a5.9     Document Type: Article

References (9)