Multiple mechanism model for photoluminescence from oxidized porous Si

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 335-339

  Qin, G G ^a,b   Qin, G ^c  

^a PEKING UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MATHEMATICAL MODELS; OXIDATION; PHOTOEMISSION; PHOTOLUMINESCENCE; QUANTUM THEORY;

NANOMETER SILICON PARTICLES; PHOTOEXCITATION; QUANTUM CONFINEMENT MODEL;

POROUS SILICON;

EID: 0034427473     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<335::AID-PSSA335>3.0.CO;2-W     Document Type: Article

References (25)

1. L.T. CANHAM, Appl. Phys. Lett. 57, 1146 (1990).
2. A.G. CULLIS, L.T. CANHAM, and P.D.J. CALCOTT, J. Appl. Phys. 82, 909 (1997). L.T. CANHAM (Ed.), Properties of Porous Silicon, EMIS Datareview Series, No. 18, INSPEC, London 1997.
3. A.G. CULLIS, L.T. CANHAM, and P.D.J. CALCOTT, J. Appl. Phys. 82, 909 (1997). L.T. CANHAM (Ed.), Properties of Porous Silicon, EMIS Datareview Series, No. 18, INSPEC, London 1997.
4. A.G. CULLIS, L.T. CANHAM, and P.D.J. CALCOTT, J. Appl. Phys. 82, 1 (1997).
5. M.V. WOLKIN, J. JORNE, P.M. FAUCHET, G. ALLAN, and C. DELERUE, Phys. Rev. Lett. 82, 197 (1999).
6. A. GROSMAN, C. ORTEGA, J. SIEJKA, and M. CHAMARRO, J. Appl. Phys. 74, 1992 (1993).
7. I. SUEMUNE, N. NOGUVHI, and M. YAMANISH, Jpn. J. Appl. Phys. 31, L494 (1992).
8. S. LIU, C. PALSULE, S. YI, and S. GANGOPADHYAY, Phys. Rev. B 49, 10318 (1995).
9. G.G. QIN and Y.Q. JIA, Solid State Commun. 86, 559 (1993).
10. G. QIN and G.G. QIN, J. Appl. Phys. 82, 2572 (1997).
11. G.G. QIN, J. LIN, J.Q. DUAN, and G.Q. YAO, Appl. Phys. Lett. 69, 1689 (1996). G.G. QIN, X.S. LIU, S.Y. MA, J. LIN, G.Q. YAO, X.Y. LIN, and K.X. LIN, Phys. Rev. B 55, 12876 (1997).
12. G.G. QIN, J. LIN, J.Q. DUAN, and G.Q. YAO, Appl. Phys. Lett. 69, 1689 (1996). G.G. QIN, X.S. LIU, S.Y. MA, J. LIN, G.Q. YAO, X.Y. LIN, and K.X. LIN, Phys. Rev. B 55, 12876 (1997).
13. M.S. HYBERTSEN, in: Electronic Structure and Optical Properties of Semiconductors, Eds. M.L. COHEN and J.R. CHELIKOWSKY, Springer-Verlag, New York 1988.
14. G. QIN and G.G. QIN, unpublished.
15. J.P. PROOT, C. DELERUE, and G. ALLAN, Appl. Phys. Lett. 61, 1948 (1992).
16. J.B. XIA and K.W. CHEAH, Phys. Rev. B 59, 14876 (1999).
17. G. QIN, Solid State Commun. 95, 483 (1995).
18. N.M. JOHNSON, Appl. Phys. Lett. 34, 802 (1979). N. M. JOHNSON, D.J. BARTELINK, and J.P. MCVITTIE. J. Vac. Sci. Technol. A 16, 1407 (1979).
19. N.M. JOHNSON, Appl. Phys. Lett. 34, 802 (1979). N. M. JOHNSON, D.J. BARTELINK, and J.P. MCVITTIE. J. Vac. Sci. Technol. A 16, 1407 (1979).
20. A.G. CULLIS, L.T. CANHAM, G.M. WILLIAMS, P.W. SMITH, and O.D. DOSSER, J. Appl. Phys. 82, 909 (1994).
21. G.G. QIN, H.Z. SONG, B.R. ZHANG, J. LIN, J.Q. DUAN, and G.Q. YAO, Phys. Rev. B 54, 2548 (1996).
22. I.M. CHANG and Y.F. CHEN. J. Appl. Phys. 82, 3514 (1997).
23. J. HARPER and M.J. SAILOR, Langmuir 13, 4652 (1997).
24. L. JIA, S.P. WANG, I.H. WILSON, S.K. HARK, S.L. ZHANG, Z.F. LIU, and S.M. CAI, Appl. Phys. Lett. 71, 1391 (1997).
25. H. MIZUNO, H. KOYAMA, and N. KOSHIDA, Appl. Phys. Lett. 69, 3779 (1996).