Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 507-512

  Robins, L H ^a   Armstrong, J T ^a   Marinenko, R B ^a   Vaudin, M D ^a   Bouldin, C E ^a   Woicik, J C ^a   Paul, A J ^a   Thurber, W R ^a   Miyano, K E ^a   Parker, C A ^a   Roberts, J C ^a   Bedair, S M ^a   Piner, E L ^a   Reed, M J ^a   El Masry, N A ^a   Donovan, S M ^a   Pearton, S J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; COMPOSITION EFFECTS; FUNCTIONS; INDIUM; LATTICE CONSTANTS; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL METHODS; SEMICONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

AVERAGE INDIUM FRACTION; CATHODOLUMINESCENCE SPECTROSCOPY; COMPOSITIONAL INHOMOGENEITY; ELECTRON PROBE MICROANALYZER; EXTENDED X RAY ABSORPTION FINE STRUCTURE; FULL WIDTHS AT HALF MAXIMUM; INDIUM GALLIUM NITRIDE FILMS; OPTICAL BAND GAP; OPTICAL TRANSMISSION SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034424961     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)