Electrical activity of frank partial dislocations and the influence of metallic impurities in Czochralski-grown silicon

Chinese Physics Letters

Volumn 14, Issue 6, 1997, Pages 436-439

  Shen, Bo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; SILICON;

ELECTRICAL ACTIVITIES; ELECTRON-BEAM-INDUCED CURRENT; ELECTRON-BEAM-INDUCED CURRENT TECHNIQUES; FE IMPURITY; IMPURITIES IN; LOWS-TEMPERATURES; METALLIC IMPURITY; PARTIAL DISLOCATIONS;

STACKING FAULTS;

EID: 0031319281     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/6/010     Document Type: Article

References (4)

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3. V. Higgs, M. Loulding, A. Brinklew and P. Kinghtley, Appl. Phys. Lett. 60 (1992) 1369.
4. P. R. Wilshaw, T. S. Fell and M. D. de Coleau, J. Phys. IV (Paris) (1991) C6-3.