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Volumn 37, Issue 5 Part 1, 2000, Pages 587-592
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Band structure parameters of compressively strained In0.65Ga0.35As/InGaAsP multiple quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0034343845
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: 10.3938/jkps.37.587 Document Type: Article |
Times cited : (4)
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References (18)
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