Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

Journal of Electronic Materials

Volumn 29, Issue 11, 2000, Pages 1346-1350

  Malikova, L ^a   Pollak, Fred H ^a,c   Gorea, Oleg ^b   Korotcov, Alexander ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b MOLDOVA STATE UNIVERSITY   (Moldova)

^c CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DIFFUSION; PHOSPHORUS; PIEZOELECTRICITY; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; SUBSTRATES;

EPILAYERS; MODULATION SPECTROSCOPY; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034323296     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0136-y     Document Type: Article

References (37)

1. U. Bavgert, Handbook of Adv. Mater., ed. N.P. Cheremisinoff (Matawan, NJ: Marcel Dekker, 1994).
2. W. Pan, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, J. Appl. Phys. 78, 3517 (1995).
3. K.B. Chough, T.Y. Chang, M.D. Feuer, N.J. Sauer, and B. Lalevic, IEEE Trans. Electron. Dev. ED-38, 2708 (1991).
4. P.L. Gourley and R.M. Biefeld, Appl. Phys. Lett. 45, 749 (1984).
5. M.E. Pistol, M.R. Leys, and L. Samuelson, Phys. Rev. B 37, 4664 (1988).
6. X. Zhang, K. Onabe, Y. Nitta, B. Zhang, S. Fukatsu, Y. Shiraki, and R. Ito, Jpn. J. of Phys. 30, L1631 (1991).
7. M.E. Pistol and X. Liu, Phys. Rev. B 45, 4312 (1992).
8. J.A. Prieto, G. Armelles, M.-E. Pistol, P. Castrillo, J.P. Silveira, and F. Briones, Appl. Phys. Lett. 70, 3449 (1997).
9. T. Maruyama, E.L. Garwin, R. Prepost, and G.H. Zapalac, Phys. Rev. B 46, 4216 (1992).
10. H. Yaguchi, X. Zhang, K. Ota, M. Nagahara, and K. Onabe, Jpn. J. of Appl. Phys. 32, 544 (1993).
11. W. Shan, S.J. Hwang, J.J. Song, H.Q. Hou, and C.W. Tu. Phys. Rev. B 47, 3765 (1993); Appl. Phys. Lett. 62, 2078 (1993).
12. W. Shan, S.J. Hwang, J.J. Song, H.Q. Hou, and C.W. Tu. Phys. Rev. B 47, 3765 (1993); Appl. Phys. Lett. 62, 2078 (1993).
13. F. Agahi, K.M. Lau, and E.S. Koteles, IEEE J. Quantum Electron. 30, 459 (1994).
14. E. Perez, L. Minoz, L. Vina, E.S. Koteles, and K.M. Lau, Proc. 23th Int. Conf. on Phys. Semicond., ed. M. Sheffler and R. Zimmerman (World Scientific, Singapore, 1996), p. 1975.
15. C. Sugiura, J. Phys. Soc. Japan 65, 2170 (1996).
16. J.G. Cederberg, K.L. Bray, and T.F. Kuech, J. Appl. Phys. 82, 2263 (1997).
17. U. Egger, M. Schultz, P. Werner, O. Breitenstein, T.Y. Tan, U. Gosele, R. Franzheld, M. Uematsu, and H. Ito, J. Appl. Phys. 81, 6057 (1997).
18. A.E. Blakeslee, J. Electrochem. Soc. 118, 1459 (1971).
19. L. Esaki, L.L. Chang, and R. Tsu, Proc. 12th Int. Conf. on Low Temper. Phys. (New York: Academic, 1971), p. 551.
20. O.S. Gorea, V.V. Zelenin, A.V. Koval, and A.V. Simashkevich, J. Cryst. Property and Preparation 32-34, 503 (1991).
21. V.V. Zelenin, O.S. Gorea, and Yu.V. Zhilyaev, "Growth of Multilayer Periodic Structures from the Gas Phase on the Basic of GaAs/GaAsP Heterojunctions," N1203 (Chisinau, Moldova: Mold. Scient. Res. Inst. of Sci. Tech. Inf., 1990).
22. O. Gorea, M. Karaman, A. Keyanu, and O. Tatarinskaya, J. of Lumin. 72, 338 (1997).
23. N.L. Dmitruk, A.V. Goncharenko, O.S. Gorea, V.R. Romaniuk, O.M. Tatarinskaya, and E.F. Venger, Phys. Low-Dim. Struct. 1/2, 149 (1998).
24. G.C. Osburn, J. Appl. Phys. 53, 1587 (1982).
25. J. Arriaga, M.C. Munoz, V.R. Velasco, and F. Garsia-Moliner, Phys. Rev. B 43, 9626 (1991).
26. M. Di Ventra, M. Peressi, and A. Baldereschi, Phys. Rev. B 54, 5691 (1996).
27. F.H. Pollak and H. Shen, Mater. Sci. and Eng. R10, 275 (1993).
28. F.H. Pollak, Handbook on Semiconductors, Vol. 2, ed. M. Balkanski (New York: North Holland, 1994), p. 527.
29. See, for example, G. Bastard and J.A. Brum, IEEE J. Quant. Electron. QE-22, 1625 (1986).
30. F.H. Pollak, Semiconductors and Semimetals, Vol. 32, ed.T.P. Pearsall (New York: Academic, 1990), p. 17.
31. R. Beanland, M. Aindow, T.B. Joyce, P. Kidd, M. Lourenco, and P.J. Goodhew, J. Cryst. Growth 149 (1995).
32. D. Aspnes and A. Studna, Phys. Rev. B 7, 4605 (1973).
33. H. Temkin, D. Gershoni, and M. B. Panish, Semiconductors and Semimetals, Vol. 40, ed. A.C. Gossard (New York: Academic, 1994), p. 337.
34. D. Gershoni, H. Temkin, J.M. Vandenberg, S.N.G. Chu, R.A. Hamm, and M.B. Panish, Phys. Rev. Lett. 60, 448 (1988).
35. See, for example, M. Missous, Properties of Aluminum Gallium Arsenide, ed. S. Adachi (London: INSPEC, 1993), p. 73.
36. V.A. Wilkinson, A.D. Prins, D.J. Dunstan, L.K. Howard, and M.T. Emeny, J. Electron Mater. 20, 509 (1991).
37. R. People, A. Jayaraman, S.K. Sputz, J.M. Vanderberg, D.L. Sivco, and A.Y. Cho, Phys. Rev. B 45, 6031 (1992).