Franz-keldysh oscillations in photoreflectance spectra of complex AlxGa1-xas structures

Advanced Functional Materials

Volumn 10, Issue 6, 2000, Pages 261-265

  Sitarek, Piotr ^a   Misiewicz, Jan ^a   Veje, Erling ^b  

^a Wrocl University of Technology   (Poland)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

AlxGa1 xAs; Direct band gap; Franz keldysh oscillations; Photoreflectance

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC FIELD EFFECTS; ENERGY GAP; HELIUM NEON LASERS; INTERFACES (MATERIALS); LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; FRANZ-KELDYSH OSCILLATIONS; PHOTOREFLECTANCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0034318227     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-0712(200011/12)10:6<261::AID-AMO424>3.0.CO;2-S     Document Type: Article

References (4)

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