Determining the effectiveness of HBT emitter ledge passivation by using an on-ledge Schottky diode potentiometer

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 460-462

  Ma, Pingxi ^a   Zampardi, Peter ^a,b   Zhang, Liyang ^a   Chang, M F ^a  

^a Engineering IV   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PASSIVATION; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

EMITTER LEDGE PASSIVATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032595845     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784452     Document Type: Article

References (7)

1. P. Zampardi, B. T. McDermott, M. Wetzel, and P. Asbeck, "Measurement techniques for characterizing passivation ledges in heterostructure bipolar transistors," unpublished.
2. H. H. Lin and S. C. Lee, "Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design," Appl. Phys. Lett., vol. 47, no. 8, pp. 839-841, 1985.
3. L. H. Camnitz, "Improved current gain stability in C-doped HBT's with an AlGaAs surface passivation layers," in Tech. Dig., GaAs Reliability Workshop, Monterey, CA, 1991.
4. J. R. Waldrop and M. F. Chang, "Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: Influence of emitter edge current," IEEE Electron Device Lett., vol. 16, pp. 8-10, Jan. 1995.
5. W. Liu, Handbook of III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998, ch. 3, sec. 14.
6. S. M. Sze, Physics of Semiconductor Devices, New York: Wiley, 1981, pp. 251-258.
7. S. M. Sze and W. Shockley, "Unit-cube expression for space-charge resistance," Bell Syst. Tech. J., vol. 46, p. 837, 1967.