메뉴 건너뛰기




Volumn 18, Issue 6, 2000, Pages 3198-3201

Maskless deposition of gold patterns on silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; GOLD; POTASSIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 0034317714     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321753     Document Type: Article
Times cited : (7)

References (13)
  • 3
    • 0021425718 scopus 로고
    • K. Gamo, N. Takakura, N. Samoto, R. Shimizu, and S. Namba, Jpn. J. Appl. Phys., Part 2 23, L293 (1984); K. Gamo, N. Takakura, D. Takehara, and S. Namba, Extended Abstracts of the 16th International Conference on Solid State Devices and Materials (Japan Society of Applied Physics, Tokyo, 1984), p. 31.
    • (1984) Jpn. J. Appl. Phys., Part 2 , vol.23
    • Gamo, K.1    Takakura, N.2    Samoto, N.3    Shimizu, R.4    Namba, S.5
  • 6
    • 0343824383 scopus 로고    scopus 로고
    • note
    • The defects are vacancies induced by the incident beam. For lower energies, a smaller ion dose is sufficient.
  • 9
    • 0343824380 scopus 로고    scopus 로고
    • note
    • The potentials are measured against a saturated calomel electrode.
  • 13
    • 0343388779 scopus 로고    scopus 로고
    • note
    • 3COOH(100%) + 20 ml HF(48%) for 5 s).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.