Beryllium doped InP/InGaAsP heterojunction bipolar transistors

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 2039-2045

  Shamir, N ^a   Ritter, D ^a   Cytermann, C ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; IONIZATION OF SOLIDS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ELECTRON IMPACT IONIZATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032207135     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00173-7     Document Type: Article

References (16)

1. Ritter, D., Hamm, R. A., Feygenson, A. and Panish, M. B., Appl. Phys. Lett., 1992, 60, 3150.
2. Feygenson, A., Ritter, D., Hamm, R. A., Smith, P. R., Montgomery, R. K., Yadvish, R. D., Temkin, H. and Panish, M. B., Electron. Lett., 1992, 26, 607.
3. Abid, Z., McAlister, S. P., McKinnon, W. R. and Guzzo, E. E., IEEE Electron Device Lett., 1994, 15, 178.
4. Feygenson, A., Montgomery, R. K., Smith, P. R., Hamm, R. A., Haner, M., Yadvish, R. D., Panish, M. B., Temkin, H. and Ritter, D., in Proc. 5th International Conference on Indium Phosphide and Related Materials. Paris, France, 1993, p. 572.
5. Tokumitsu, E., Dentai, A. G., Joyner, C. H. and Chandrasekhar, S., Appl. Phys. Lett., 1990, 57, 2841.
6. Cohen, G. M., Benchimol, J. L., Le Roux, G., Legay, P. and Sapriel, J., Appl. Phys. Lett., 1996, 68, 3793.
7. Chen, T. R., Zhuang, Y. H., Chang, B., Yi, M. B. and Yariv, A., IEEE Electron Device Lett., 1987, 8, 191.
8. Ohishi, T., Abe, Y., Sugimoto, H., Ohtsuka, K. and Matsui, T., Electron. Lett., 1990, 26, 392.
9. Ren, F., Abernathy, C. R., Pearton, S. J. and Wisk, P. W., Electron. Lett., 1994, 30, 1184.
10. Ritter, D., Hamm, R. A., Panish, M. B. and Geva, M., in Proc. 3rd International Conference on Indium Phosphide and Related Materials. Cardiff, UK, 1991, p. 363.
11. Hamm, R. A., Ritter, D. and Temkin, H., J. Vac. Sci. Technol. A, 1994, 12, 2790.
12. Zanoni, E., Crabbe, E. F., Stork, J. M. C., Pavan, P., Verzellesi, G., Vendrame, L. and Canali, C., IEEE Electron Device Lett., 1993, 14, 69.
13. Canali, C., Capasso, F., Malik, R., Neviani, A., Pavan, P., Tedesco, C. and Zanoni, E., IEEE Electron Device Lett., 1994, 15, 354.
14. Canali, C., Forzan, C., Neviani, A., Vendrame, L., Zanoni, E., Hamm, R. A., Malik, R. J., Capasso, F. and Chandrasekhar, S., Appl. Phys. Lett., 1995, 66, 1095.
15. Osaka, F., Mikawa, T. and Kaneda, T., IEEE J. Quantum Electron., 1985, 21, 1326.
16. Urquhart, J., Robbins, D. J., Taylor, R. I. and Moseley, A. J., Semicond. Sci. Technol., 1990, 5, 789.