Temperature Dependence of Breakdown Voltage in Silicon Abrupt P-N Junctions

IEEE Transactions on Electron Devices

Volumn 18, Issue 6, 1971, Pages 391-393

  Chang, C Y ^a   Chiu, S S ^a   Hsu, L P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005213030     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1971.17210     Document Type: Article

References (7)

1. G. A. Baraff, “Distribution functions and ionization rates for hot electrons in semiconductors,” Phys. Rev., vol. 128, 1962, p. 2507.
2. S. M. Sze and G. Gibbon, “Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GaP,” Appl. Phys, Left., no. 8, 1966, P. 111.
3. C. R. Crowell and S. M. Sze, “Temperature dependence of avalanche multiplication in semiconductors,” Appl. Phys. Lett., no. 9, 1966. p, 242.
4. C. A. Lee, R. A. Logan, R. Batdorf, J. J. Kleimack, and W. Wiegmann, “Ionization rates of holes and electrons in silicon,” Phys, Rev., vol. 134, 1964, p. A761.
5. B. T. Dai and C. Y. Chang, “Temperature dependence of ionization rates in Ge,” to be published.
6. Y. J. Chang and S. M. Sze, “Temperature dependence of ionization rates in GaAs,” J. Appl), Phys., vol. 40, 1969, p. 5392.
7. C. Y. Chang and S. M. Sze, “Carrier transport across metal-semiconductor barriers,” Solid-State Eleciron., vol. 13, 1970, p. 727.