Epitaxial growth of GaN using reactive neutrals extracted from the nitrogen Helicon wave plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 6, 2000, Pages 2847-2853

  Kim, Ki Sung ^a   Kim, Seon Hyo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; EVAPORATION; MAGNETS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

WAVE PLASMA ASSISTED EVAPORATION DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0034315370     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319676     Document Type: Article

References (12)

1. F. E. Rose, M. T. Taylor, and R. Bowers, Phys. Rev. 126, 1122 (1962).
2. G. N. Harding and P. C. Thonemann, Proc. Phys. Soc. London 85, 317 (1965).
3. R. W. Boswell, Phys. Lett. A 33, 457 (1970).
4. R. W. Boswell, J. Plasma Phys. 31, 31 (1984).
5. R. W. Boswell, Plasma Phys. Controlled Fusion 26, 1147 (1984).
6. S. H. Kim, I. G. Kim, and K. S. Kim, Appl. Phys. Lett. 69, 4023 (1996).
7. C. Charles, G. Giroult-Matlakowski, R. W. Boswell, A. Goulet, G. Turban, and C. Cardinaud, J. Vac. Sci. Technol. A 13, 2954 (1993).
8. N. Blayo et al., J. Vac. Sci. Technol. B 12, 1340 (1994).
9. R. C. Powell, N. E. Lee, Y. W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1993).
10. M. A. Lieberman and A. J. Lichtenberg, Principle of Plasma Discharge and Material Processing (Wiley, New York, 1994), pp. 432-433.
11. N. Newman, J. Cryst. Growth 178, 102 (1997).
12. B. D. Cullity, Elements of X-ray Diffraction, 2nd ed. (Addition-Wesley, London, 1978), p. 102.