Towards quantum cellular automata operation in silicon: transport properties of silicon multiple dot structures

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 429-434

  Single, C ^a   Augke, R ^a   Prins, F E ^a   Wharam, D A ^a   Kern, D P ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATA THEORY; CAPACITANCE MEASUREMENT; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTROSTATIC MODEL; QUANTUM CELLULAR AUTOMATA; SILICON MULTIPLE DOT STRUCTURES; SINGLE ELECTRON TRANSISTOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034315025     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0945     Document Type: Article

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