Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3544-3548

  Barth, W ^a   Debski, T ^a   Shi, F ^a,g   Hudek, P ^a,h   Kostic, I ^a,i   Rangelow, I W ^a   Biehl, S ^b   Iwert, T ^b   Grabiec, P ^c   Studzinska, K ^c   Mitura, S ^d   Bekh, I I ^e   Lushkin, A E ^e   Il'chenko, L G ^e   Il'chenko, V V ^e   Haindl, G ^f  

^a UNIVERSITY OF KASSEL   (Germany)

^b Sen GmbH   (Germany)

^c Research Group of Integrated Circuits and System Design   (Poland)

^d LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^e TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^f BIELEFELD UNIVERSITY   (Germany)

^g INFINEON TECHNOLOGIES AG   (Germany)

^h Vistec Electron Beam GmbH   (Germany)

ⁱ Lab E Beam Lithography M   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRON EMISSION; MICROMACHINING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; RAMAN SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DIAMOND-LIKE CARBON (DLC) FILMS;

FIELD EMISSION CATHODES;

EID: 0034314713     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1324648     Document Type: Article

References (7)

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