Tunnel excess current in nondegenerate barrier (p-n and m-s) silicon-containing III-V structures

Semiconductors

Volumn 31, Issue 2, 1997, Pages 115-120

  Evstropov, V V ^a   Zhilyaev, Yu V ^a   Dzhumaeva, M ^b   Nazarov, N ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Turkmenistan Academy of Sciences   (Turkmenistan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039921829     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187092     Document Type: Article

References (26)

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