Nanoindentation studies of MOVPE grown GaAs/InP heterostructures

Materials Chemistry and Physics

Volumn 66, Issue 2, 2000, Pages 207-212

  Arivuoli, D ^a   Lawson, N S ^a   Krier, A ^a   Attolini, G ^b   Pelosi, C ^b  

^a Sch Phys Chem   (United Kingdom)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; ELASTICITY; HARDNESS; METALLORGANIC VAPOR PHASE EPITAXY; NANOTECHNOLOGY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

DEPTH OF PENETRATION; NANOINDENTATION; PROFILOMETRY; SURFACE FLOW;

HETEROJUNCTIONS;

EID: 0034301683     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00337-0     Document Type: Article

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