Novel method for solution growth of thin silica films from tetraethoxysilane

Advanced Materials

Volumn 12, Issue 19, 2000, Pages 1434-1437

  Vossen, Dirk L J ^a   De Dood, Michiel J A ^a   Van Dillen, Teun ^a   Zijlstra, Tony ^c   Van Der Drift, Emile ^c   Polman, Albert ^a   Van Blaaderen, Alfons ^a,b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b UTRECHT UNIVERSITY   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDENSATION REACTIONS; HIGH TEMPERATURE PROPERTIES; HYDROLYSIS; IONIC STRENGTH; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICA; SPUTTER DEPOSITION;

SURFACE REACTION LIMITED GROWTH; TETRAETHOXYSILANE; THERMAL OXIDATION;

THIN FILMS;

EID: 0034301399     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4095(200010)12:19<1434::AID-ADMA1434>3.0.CO;2-L     Document Type: Article

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