Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 214-219

  De Padova, P ^a   Larciprete, R ^b,c   Quaresima, C ^a   Reginelli, A ^a   Perfetti, P ^a  

^a CNR   (Italy)

^b ENEA   (Italy)

^c SINCROTRONE TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0034301096     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00417-7     Document Type: Article

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