Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 263-267

  Aristov, V Yu ^a,b   Zhilin, V M ^b   Grupp, C ^c   Taleb Ibrahimi, A ^c   Kim, H J ^d   Mangat, P S ^f   Soukiassian, P ^c,e   Le Lay, G ^a  

^a CAMPUS DE LUMINY   (France)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d Dongguk University   (South Korea)

^e DIF   (France)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CESIUM; CHANNEL FLOW; COMPUTATIONAL METHODS; CURVE FITTING; ELECTRON EMISSION; ENERGY GAP; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONOLAYERS; PHOTOEMISSION;

DOWNWARD BAND BENDING; MODEL-FUNCTION CURVE FITTING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034301010     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00402-5     Document Type: Article

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