Transient dynamics and control of indium phosphide LEC furnaces

Materials Chemistry and Physics

Volumn 66, Issue 2, 2000, Pages 236-245

  Masi, Maurizio ^a   Carrà, Sergio ^a   Polli, Mattia ^a   Ratti, Michele ^a   Guadalupi, Giuseppe ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Venezia Tecnologie SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; FEEDBACK; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

INDIUM PHOSPHIDE; LIQUID ENCAPSULATED CZOCHRALSKI (LEC) FURNACES;

INDIUM COMPOUNDS;

EID: 0034300701     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00321-7     Document Type: Article

References (39)

1. Jordan A.R., Caruso R., Von Neida A.R. J. Appl. Phys. 52:1981;3331.
2. Duseaux M. J. Crystal Growth. 61:1983;576.
3. Kobayashi N., Iwaki T. J. Crystal Growth. 73:1985;96.
4. Motakef S., Witt A.F. J. Crystal Growth. 80:1987;37.
5. Derby J.J., Brown R.A. J. Crystal Growth. 74:1986;605.
6. Derby J.J., Brown R.A., Geyling F.T., Jordan A.S., Nikolakopulou G.A. J. Electrochem. Soc. 132:1985;470.
7. Thomas P.D., Derby J.J., Atherton L.J., Brown R.A., J Wargo M. J. Crystal Growth. 96:1989;135.
8. Brown R.A. AIChE J. 34:1988;881.
9. Derby J.J., Brown R.A. J. Crystal Growth. 75:1986;227.
10. Derby J.J., Brown R.A. J. Crystal Growth. 83:1987;137.
11. Derby J.J., Atherton L.J., Thomas P.D., Brown R.A. J. Sci. Comput. 2:1987;297.
12. Kinney T.A., Brown R.A. J. Crystal Growth. 132:1993;551.
13. Kinney T.A., Bornside D.E., Brown R.A., Kim K.M. J. Crystal Growth. 126:1993;413.
14. Bardsley W., Hurle D.T.J., Joyce G.C. J. Crystal Growth. 40:1977;13.
15. Bardsley W., Hurle D.T.J., Joyce G.C., Wilson G.C. J. Crystal Growth. 40:1977;21.
16. Hurle D.T.J. J. Crystal Growth. 42:1977;473.
17. Satunkin G.A., Rosolenko S.N. Crystal Res. Technol. 21:1986;1125.
18. Johansen T.H. J. Crystal Growth. 80:1987;465.
19. Johansen T.H. J. Crystal Growth. 80:1987;609.
20. Johansen T.H. J. Crystal Growth. 118:1992;188.
21. Johansen T.H. J. Crystal Growth. 123:1992;353.
22. Gevelber M.A., Stephanopoulos G., Wargo M.J. J. Crystal Growth. 85:1987;256.
23. Gevelber M.A., Wargo M.J., Stephanopoulos G. J. Crystal Growth. 91:1987;199.
24. Masi M., Fogliani S., Carrà S. Crystal Res. Technol. 34:1999;1157.
25. Carrà S., Fogliani S., Masi M., Zanotti L., Mucchino C., Paorici C. J. Crystal Growth. 166:1996;641.
26. Surek T., Chalmers B. J. Crystal Growth. 29:1975;1.
27. Satunkin G.A., Leonov A.G. J. Crystal Growth. 102:1990;592.
28. M. Masi, S. Fogliani, S. Carrà, in: K.F. Jensen, T. Anderson, D.W. Hess (Eds.), The Synthesis and Processing of Electronic Materials, American Institute of Chemical Engineers, New York, 1994, p. 111.
29. Heywang W. Z Naturforsch. A. 11:1956;238.
30. Sveshtarov P., Gospodinov M. J. Crystal Growth. 113:1991;186.
31. R.B. Bird, W.E. Stewart, E.N. Lightfoot, Transport Phenomena, Wiley, New York, 1960.
32. L.R. Petzold, P.N. Brown, A.C. Hindmarsh, C.W. Ulrich, Livermore National Laboratory, Contract No. W-7405-Eng-48, 1991.
33. M. Dente, E. Ranzi, Principi d'Ingegneria Chimica, Città Studi, 1987.
34. Rosemberger F., Muller G. J. Crystal Growth. 65:1983;91.
35. Cochran W.G. Proc. Camb. Philos. Soc. 30:1934;365.
36. B.R. Pamplin, Crystal Growth, Pergamon, New York, 1980.
37. von Karman Th. ZAMM. 1:1921;233.
38. I. Catton, in: S. Kakac, W. Aung, R. Viskanta (Eds.), Natural Convection, Hemisphere, Washington, DC, 1985, p. 97.
39. M. Polli, M. Ratti, Studio della dinamica di crescita di semiconduttori III-V in sistemi LEC, Thesis, Politecnico di Milano, 1997.