Melt-solid interface shape in LEC GaAs crystals: Comparison between calculated and experimentally observed shapes

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 641-645

  Carrà, Sergio ^a   Fogliani, Sabrina ^a   Masi, Maurizio ^a   Zanotti, Lucio ^b   Mucchino, Claudio ^b   Paorici, Carlo ^c  

^a POLITECNICO DI MILANO   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENCAPSULATION; ETCHING; INGOTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SENSITIVITY ANALYSIS;

ENCAPSULANT VOLUME; GROWTH STRIATIONS; INTERFACE SHAPES; LIQUID ENCAPSULATION; MELT SOLID INTERFACE; NOMARSKI EQUIPPED METALLOGRAPHIC MICROSCOPE; PULL RATE; THERMAL CAPILLARY THEORY; UNDOPED CRYSTALS;

CRYSTAL GROWTH FROM MELT;

EID: 0030230784     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00062-0     Document Type: Article

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