Formation, geometric and electronic properties of microrelief Au-GaAs interfaces

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 97-102

  Dmitruk, N L ^a   Mamykin, S V ^a   Rengevych, O V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ELECTRONIC STRUCTURE; ETCHING; GOLD; INTERFACES (MATERIALS); PHOTOELECTRICITY; PHOTOEMISSION; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

ANISOTROPIC CHEMICAL ETCHING; MICRORELIEF INTERFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034300315     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00432-3     Document Type: Article

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