X-ray diffraction and Raman scattering study of near-surface structure perfection of GaAs single crystals after anisotropic etching

Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 289-296

  Dmitruk, I ^a   Dmitruk, N ^b   Domagala J ^c   Klinger, D ^c   Zymierska, D ^c   Auleytner, J ^c  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; ETCHING; LIGHT REFLECTION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

ANISOTROPIC ETCHING; NEAR-SURFACE STRUCTURE PERFECTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032621854     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)01023-8     Document Type: Article

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