Protection of silicon wafers from alkali contamination during high-temperature processing using electric field

Journal of the Electrochemical Society

Volumn 147, Issue 10, 2000, Pages 3892-3898

  Beregovsky, M ^a   Klyuch, A ^b   Raskin, Y ^b   Zinman, Y ^b   Shacham Diamand, Y ^c   Deal, B E ^d  

^a Tower Semiconductor Limited ^*  (Israel)

^b Sizary Ltd   (Israel)

^c TEL AVIV UNIVERSITY   (Israel)

^d Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALI CONTAMINATION; TOTAL REFLECTION X RAY FLUORESCENCE TECHNIQUE; VAPOR PHASE DECOMPOSITION; WATER PROCESSING;

ALKALI METALS; ANNEALING; CAPACITANCE; CONTAMINATION; DECOMPOSITION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FLUORESCENCE; HIGH TEMPERATURE OPERATIONS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA;

SILICON WAFERS;

EID: 0034295258     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393992     Document Type: Article

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