Effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Thin Solid Films

Volumn 374, Issue 1, 2000, Pages 80-84

  Horng, Gwo Ji ^a   Chang, Chun Yen ^a   Ho, Chia ^b   Lee, Ching Yuan ^b   Huang, T Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; FILM GROWTH; GRAIN SIZE AND SHAPE; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

SCHOTTKY BARRIER DETECTOR (SBD);

PLATINUM COMPOUNDS;

EID: 0034291656     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01063-4     Document Type: Article

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