Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1869-1873

  Cao, G J ^a   De Souza, M M ^a   Narayanan, E M S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

KIRK EFFECTS; RESURF PRINCIPLE;

BIPOLAR TRANSISTORS;

EID: 0034291095     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00126-X     Document Type: Article

References (10)

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