Physical properties of the Ba-adsorbed Si(111) surface at elevated temperatures

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 4, 2000, Pages 461-464

  Ahn, J R ^a   Kim, H W ^a   Lee, K D ^a   Chung, J W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BARIUM; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; HIGH TEMPERATURE EFFECTS; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; PHOTONS; PHYSICAL PROPERTIES; SURFACE STRUCTURE;

HYBRIDIZATION BAND STRUCTURE;

SILICON WAFERS;

EID: 0034288113     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000584     Document Type: Article

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