Effects of electrostatic forces generated by the driving signal on capacitive sensing devices

Sensors and Actuators, A: Physical

Volumn 84, Issue 3, 2000, Pages 213-219

  Bao, Minhang ^a   Yang, Heng ^a   Yin, Hao ^a   Shen, Shaoqun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; ELECTROSTATICS; FEEDBACK; RELIABILITY; SENSITIVITY ANALYSIS; VOLTAGE MEASUREMENT;

CAPACITIVE MECHANICAL SENSORS; PULL IN EFFECTS; SINGLE SIDED DRIVING SIGNALS; VARIABLE MECHANICAL CAPACITORS;

SENSORS;

EID: 0034275498     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00312-5     Document Type: Article

References (4)

1. Leuthold H., Rudolf F. An ASIC for high-resolution capacitive microaccelerometers. Sens. Actuators, A. 21-23:1990;278-281.
2. Kuehnel W., Sherman S. A surface micromachined silicon accelerometer with on chip detection circuitry. Sens. Actuators, A. 45:1994;7-16.
3. Puers R., Lapadatu D. Electrostatic forces and their effects on capacitive mechanical sensors. Sens. Actuators, A. 56:1996;203-210.
4. Matsuda K., Kanda Y., Yamamura K., Suzuki K. Nonlinearity of piezoresistive effect in n-and p-type silicon. Sens. Actuators, A. 21-23:1990;45-48.