Infrared and Raman spectroscopy of acceptors in diamond: boron impurities

Physica Status Solidi (A) Applied Research

Volumn 181, Issue 1, 2000, Pages 51-58

  Kim, Hyunjung ^a   Grimsditch, M ^a   Anthony, T R ^b   Ramdas, A K ^c   Rodriguez, S ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON TRANSITIONS; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROUND STATE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING BORON; SOLID STATE DEVICES; THERMAL CONDUCTIVITY OF SOLIDS;

ACCEPTOR; FABRY-PEROT INTERFEROMETER; JAHN-TELLER SPLITTING; POLYCRYSTALLINE DIAMOND;

SEMICONDUCTING DIAMONDS;

EID: 0034275103     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200009)181:1<51::AID-PSSA51>3.0.CO;2-O     Document Type: Article

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