Electronic transitions of holes bound to boron acceptors in isotopically controlled diamonds

Solid State Communications

Volumn 102, Issue 12, 1997, Pages 861-865

  Kim, Hyunjung ^a   Ramdas, A K ^a   Rodriguez, S ^a   Anthony, T R ^b  

^a PURDUE UNIVERSITY   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

A. semiconductors; C. impurities in semiconductors; D. electronic states (localized); D. phonons; E. light absorption and reflection

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYOSTATS; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; LIGHT ABSORPTION; LIGHT REFLECTION; PHONONS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING;

TRANSLATIONAL SYMMETRY;

SEMICONDUCTING BORON;

EID: 0031170535     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00111-7     Document Type: Article

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