Silicon float zone process with a weak transverse magnetic field and crystal rotation

Journal of the Electrochemical Society

Volumn 147, Issue 9, 2000, Pages 3529-3534

  Ma, Nancy ^a   Walker, John S ^b   Lüdge, Anke ^c   Riemann, Helge ^c  

^a University of Missouri Rolla   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; CRYSTALS; HEAT CONVECTION; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MELTING;

CRYSTAL ROTATION; FLOAT ZONE PROCESSES; MELT MOTION; THERMOCAPILLARY CONVECTION; TRANSVERSE MAGNETIC FIELDS;

SEMICONDUCTING SILICON;

EID: 0034273735     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393932     Document Type: Article

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