A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition

Surface Science

Volumn 401, Issue 1, 1998, Pages 112-123

  Levine, Steven W ^a   Engstrom, James R ^a   Clancy, Paulette ^a  

^a School of Chemical and Molecular Engineering   (United States)

Author keywords

Atomistic dynamics; Computer simulations; Diffusion and migration; Growth; Ising models; Semiconductor semiconductor thin film structures; Silicon

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; DIFFUSION IN SOLIDS; FILM GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; STATISTICAL MECHANICS; THIN FILMS;

ATOMISTIC DYNAMICS; ISING MODELS;

SEMICONDUCTING SILICON;

EID: 0032025335     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00904-7     Document Type: Article

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