Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 3, 2000, Pages 249-253

  Krier, A ^a   Krier, S E ^a   Labadi, Z ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN LIQUIDS; GAS LASERS; INTERFACES (MATERIALS); MONOCHROMATORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE QUANTUM WELLS; RAPID SLIDER LIQUID PHASE EPITAXIAL GROWTH TECHNIQUE;

LIQUID PHASE EPITAXY;

EID: 0034273329     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000457     Document Type: Article

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