Single-step growth of InP/InGaAsP buried stripe MQW lasers on structured InP substrate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 556-559

  Rakovics, V ^a   Nagy, G ^a   Frigeri, C ^a   Longo, F ^a   Koltai, F ^a   Puspoki, S ^a   Serenyi, M ^a  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

BURIED HETEROSTRUCTURES; MULTIPLE QUANTUM WELLS (MQW); SINGLE STEP GROWTH;

QUANTUM WELL LASERS;

EID: 0029697519     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)